M29W800DT45M6F View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M29W800DT45M6F

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Numonyx -> Micron 

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Command interface

M29W800DT, M29W800DB

Table 5.

Commands, 8-bit mode, BYTE = VIL(1)

Bus write operations

Command

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

1 X F0

3 AAA AA 555 55 X F0

Auto Select

3 AAA AA 555 55 AAA 90

Program

4 AAA AA 555 55 AAA A0 PA PD

Unlock Bypass

3 AAA AA 555 55 AAA 20

Unlock Bypass

Program

2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase

6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase

6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Erase Suspend

1 X B0

Erase Resume

1 X 30

Read CFI Query

1 AA 98

1. X don’t care, PA program address, PD program data, BA any address in the block.

All values in the table are in hexadecimal.

The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15

are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6.

Program, erase times and program, erase endurance cycles

Parameter

Min.

Typ. (1)(2)

Chip erase

12

Block erase (64 Kbytes)

0.8

Erase suspend latency time

15

Program (byte or word)

10

Chip program (byte by byte)

12

Chip program (word by word)

6

Program/erase cycles (per block)

Data retention

100,000

20

Max.(2)

60(3)

6(4)

25(3)

200(3)

60(3)

30(4)

Unit

s

s

µs

µs

s

s

cycles

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

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