M29W800T, M29W800B
Table 15A. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W800T / M29W800B
Symbol Alt
Parameter
-90
VCC = 3.0V to 3.6V
CL = 30pF
Min
Max
-100
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
tAVAV
tWC Address Valid to Next Address Valid
90
100
tELWL
tCS Chip Enable Low to Write Enable Low
0
0
tWLWH
tWP Write Enable Low to Write Enable High
45
50
tDVWH
tDS Input Valid to Write Enable High
45
50
tWHDX
tDH Write Enable High to Input Transition
0
0
tWHEH
tCH Write Enable High to Chip Enable High
0
0
tWHWL tWPH Write Enable High to Write Enable Low
30
30
tAVWL
tAS Address Valid to Write Enable Low
0
0
tWLAX
tAH Write Enable Low to Address Transition
45
50
tGHWL
Output Enable High to Write Enable Low
0
0
tVCHEL tVCS VCC High to Chip Enable Low
50
50
tWHGL
tOEH Write Enable High to Output Enable Low
0
0
tPHPHH (1,2) tVIDR RP Rise Time to VID
500
500
tPLPX
tRP RP Pulse Width
500
500
tWHRL (1) tBUSY Program Erase Valid to RB Delay
90
90
tPHWL (1) tRSP RP High to Write Enable Low
4
4
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
19/33