M36DR432-ZAT View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M36DR432-ZAT

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

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M36DR432A, M36DR432B

Table 20. CFI Query System Interface Information

Offset

Data

Description

VCCF Logic Supply Minimum Program/Erase or Write voltage

1Bh

0017h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

VCCF Logic Supply Maximum Program/Erase or Write voltage

1Ch

0022h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

VPPF [Programming] Supply Minimum Program/Erase voltage

1Dh

0000h

bit 7 to 4

bit 3 to 0

HEX value in volts

BCD value in 100 millivolts

Note: This value must be 0000h if no VPP pin is present

VPPF [Programming] Supply Maximum Program/Erase voltage

1Eh

00C0h

bit 7 to 4

bit 3 to 0

HEX value in volts

BCD value in 100 millivolts

Note: This value must be 0000h if no VPP pin is present

1Fh

0004h Typical timeout per single byte/word program (multi-byte program count = 1), 2n µs

(if supported; 0000h = not supported)

20h

0000h Typical timeout for maximum-size multi-byte program or page write, 2n µs

(if supported; 0000h = not supported)

21h

000Ah Typical timeout per individual block erase, 2n ms

(if supported; 0000h = not supported)

22h

0000h Typical timeout for full chip erase, 2n ms

(if supported; 0000h = not supported)

23h

0004h Maximum timeout for byte/word program, 2n times typical (offset 1Fh)

(0000h = not supported)

24h

0000h Maximum timeout for multi-byte program or page write, 2n times typical (offset 20h)

(0000h = not supported)

25h

0004h Maximum timeout per individual block erase, 2n times typical (offset 21h)

(0000h = not supported)

26h

0000h Maximum timeout for chip erase, 2n times typical (offset 22h)

(0000h = not supported)

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