M36W108 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W108
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
'M36W108' PDF : 35 Pages View PDF
M36W108T, M36W108B
Table 12. Flash Program/Erase Times and Endurance
(TA = 0 to 70 °C; VCC = 2.7 V to 3.6 V)
Flash Memory Chip
Parameter
Min
Typ
Typical after
100k W/E Cycles
Max
Chip Erase (Preprogrammed)
5
3.3
Chip Erase
12
Boot Block Erase
2.4
Parameter Block Erase
2.3
Main Block (32Kb) Erase
2.7
Main Block (64Kb) Erase
3.3
15
Chip Program (Byte)
8
8
Byte Program
10
10
Program/Erase Cycles (per Block)
100,000
Unit
sec
sec
sec
sec
sec
sec
sec
µs
cycles
13/35
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