M36W108AB View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M36W108AB

8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

STMicroelectronics 

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M36W108AT, M36W108AB

Table 12. Flash Program/Erase Times and Endurance

(TA = 0 to 70 °C; VCC = 2.7 V to 3.6 V)

Flash Memory Chip

Parameter

Min

Typ

Typical after

100k W/E Cycles

Max

Chip Erase (Preprogrammed)

5

3.3

Chip Erase

12

Boot Block Erase

2.4

Parameter Block Erase

2.3

Main Block (32Kb) Erase

2.7

Main Block (64Kb) Erase

3.3

15

Chip Program (Byte)

8

8

Byte Program

10

10

Program/Erase Cycles (per Block)

100,000

Unit

sec

sec

sec

sec

sec

sec

sec

µs

cycles

13/36

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