M36W216B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W216B
STMicroelectronics
'M36W216B' PDF : 62 Pages View PDF
M36W216TI, M36W216BI
Table 6. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min Typ Max Unit
ILI Input Leakage Current Flash & SRAM
ILO Output Leakage Current
Flash
SRAM
0V ≤ VIN ≤ VDDQF
0V ≤ VOUT ≤ VDDQF
0V ≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
±1 µA
±10 µA
±1 µA
IDDS VDD Standby Current
Flash
SRAM
EF = VDDQF ± 0.2V
RPF = VDDQ ± 0.2V
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS − 0.2V or VIN ≤
0.2V
15 50 µA
5
15 µA
IDDD Supply Current (Reset)
Flash
RPF = VSSF ± 0.2V
15 50 µA
IDD Supply Current
SRAM
VDDS = 3.3V,
IOUT = 0 mA, f = 1MHz
VDDS = 3.3V,
IOUT = 0 mA, f = fMAX = 1/tAVAV
1.5 3 mA
7
15 mA
IDDR Supply Current (Read)
Flash
EF = VIL, GF = VIH, f = 5 MHz
10 20 mA
IDDW
Supply Current
(Program)
Flash
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
10 20 mA
10 20 mA
IDDE Supply Current (Erase)
Flash
Erase in progress
VPPF = 12V ± 5%
Erase in progress
VPPF = VDDF
5
20 mA
5
20 mA
Supply Current
IDDES (Program/Erase
Suspend)
Flash
EF = VDDQF ± 0.2V,
Erase suspended
50 µA
IPP1
Program Current
(Read or Standby)
Flash
VPPF > VDDF
400 µA
IPP2
Program Current
(Read or Standby)
Flash
VPPF ≤ VDDF
5
µA
IPPR Program Current (Reset)
Flash
RPF = VSSF ± 0.2V
5
µA
IPPW
Program Current
(Program)
Flash
VPPF = 12V ± 0.5V
Program in progress
VPPF = VDDF
Program in progress
10 mA
5 mA
IPPE Program Current (Erase)
Flash
VPPF = 12V ± 0.5V
Erase in progress
VPPF = VDDF
Erase in progress
10 mA
5
µA
VIL Input Low Voltage
Flash & SRAM
VDDQF = VDDS ≥ 2.7V
–0.3
0.6 V
VIH Input High Voltage
Flash & SRAM
VDDQF = VDDS ≥ 2.7V
0.7VDDQF
VDDQF
+0.3
V
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