M39208 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M39208' PDF : 30 Pages View PDF
M39208
Figure 6. Data Polling Flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
YES
DATA
NO
NO DQ5
=1
YES
READ DQ7
DQ7
=
YES
DATA
NO
FAIL
PASS
AI01369
Figure 7. Data Toggle Flowchart
START
READ
DQ5 & DQ6
DQ= 6
NO
TOGGLE
YES
NO DQ5
=1
YES
READ DQ6
DQ= 6
NO
TOGGLE
YES
FAIL
PASS
AI01370
Write OTP Row
Writing (only one time) in the OTP row (64 bytes)
is enabled by an instruction. This instruction is
composed of three specific Write operations of data
bytes at three specific memory locations (each
location in a different page) followed by the the data
to store in the OTP row (refer to Table 4).
When accessing the OTP row, the only LSB ad-
dresses (A6 to A0) are decoded, with A6 = ’0’.
Write the EEPROM Block Identifier
The EEPROM block identifier can be written with a
single Write operation with specific logic levels
applied on A6 and the VID level on A9 (see Table
7).
PROGRAM in the Flash BLOCK
It should be noted that writing data into the
EEPROM block and the Flash block is not per-
formed in a similar way: the Flash memory requires
an instruction (see Instruction chapter) for Erasing
and another instruction for Programming one (or
more) byte(s), the EEPROM memory is directly
written with a simple operation (see Operation
chapter).
Program Instuction. During the execution of the
Program instruction, the Flash block memory will
not accept any further instructions.
The Flash block memory can be programmed byte-
by-byte. The program instruction is a sequence of
three specific Write operations followed by writing
the address and data byte to be programmed into
the Flash block memory (see Table 4). The M39208
automatically starts and performs the programming
after the fourth write operation.
During programming, the memory status may be
checked by reading the status bits DQ5, DQ6 and
DQ7, as detailed in the following sections.
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