M39208 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M39208' PDF : 30 Pages View PDF
M39208
Table 12. DC Characteristics
(TA = 0 to 70°C or –20 to 85°C or –40 to 85°C; VCC = 2.7 V to 3.6V)
Symbol
Parameter
Test Condition
Min
Max
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
±1
ILO
Output Leakage Current
0V ≤ VOUT ≤ VCC
±1
ICC1 (1) Supply Current (Read Flash) TTL
EE = VIH, EF = VIL, G =
VIH, f = 6MHz
15
ICC2
Supply Current (Read EEPROM)
TTL
EE = VIL, EF = VIH, G =
VIH, f = 6MHz
15
ICC3 Supply Current (Standby) CMOS
EF = EE = VCC ± 0.2V
60
ICC4
Supply Current (Flash Block
Program or Erase)
Byte program, Sector or
Chip Erase in progress
20
ICC5 Supply Current (EEPROM Write)
During tWC
20
ICC6
Supply Current in Deep Power
Down Mode
After a Deep Power Down
instruction (see Table 4)
2
VIL
Input Low Voltage
VIH
Input High Voltage
–0.5
0.7 VCC
0.8
VCC + 0.3
VOL Output Low Voltage
IOL = 1.8mA
0.45
VOH Output High Voltage
IOH = –100µA
VCC –0.4
VID
A9 High Voltage
11.5
12.5
IID
VID Current
A9 = VID
100
VLKO
VCC Minimum for Write, Erase and
Program
2
2.3
Note: 1. When reading the Flash block when an EEPROM byte(s) is under a write cycle, the supply current is ICC1 + ICC5.
Unit
µA
µA
mA
mA
µA
mA
mA
µA
V
V
V
V
V
µA
V
GLOSSARY
Block: EEPROM block (64 Kbit) or Flash block (2
Mbit)
Bulk: the whole Flash block (2 Mbit)
Sector: 64 Kbyte of Flash memory
Page: 64 bytes of EEPROM
Write and Program: Writing (into the EEPROM
block) and programming (the Flash block) is not
performed in a similar way:
– the Flash memory requires an instruction (see
Instruction chapter) for Erasing and another in-
struction for Programming one (or more) byte(s)
– the EEPROM memory is directly written with a
simple operation (see Operation chapter).
SDP: Software Data Protection. Used for protect-
ing the EEPROM block against false Write opera-
tions (as in noisy environments).
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