M41T315V View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M41T315V' PDF : 30 Pages View PDF
DC and AC parameters
M41T315Y, M41T315V, M41T315W
Table 9. DC characteristics
Sym
Parameter
Test condition(1)
M41T315Y
–65
M41T315V/W
–85
Unit
Min Typ Max
Min Typ Max
IIL(2)
Input leakage
current
0V ≤ VIN ≤ VCC
±1
±1 µA
IOL
Output leakage
current
0V ≤ VOUT ≤ VCC
±1
ICC1(3) Supply current
10
ICCO1(4)
VCC power supply
current
VCC0 = VCC1 – 0.3
150
±1 µA
6
mA
100 mA
ICC2(3)
Supply current
(TTL standby)
CEI = VIH
3
2
mA
ICC3(3)
VCC power supply
current
VIL(5) Input low voltage
CEI = VCC1 – 0.2
VIH(5) Input high voltage
VOL(6) Output low voltage
VOH(6)
Output high
voltage
IOL = 4.0 mA
IOH = –1.0 mA
–0.3
2.2
2.4
1
0.8
VCC1 + 0.3
0.4
–0.3
2.0
2.4
1
mA
0.6
V
VCC +
0.3
V
0.4
V
V
VPFD
Power fail
deselect
2.80 (V)
2.97 (V)
4.25
4.50
V
2.60 (W)
2.70 (W)
VSO
Battery back-up
switchover
VBAT
2.5
V
VBAT Battery voltage
VCEO
CEO output
voltage
2.5
VCC1 – 0.2
or
VBAT – 0.2
3.7
2.5
VCC1 – 0.2
or
VBAT – 0.2
3.7
V
V
VBAT = 3.0V
IBAT(3) Battery current
TA = 25°C
0.5
VCC = 0V
ICCO2(7)
Battery backup
current
VCC0 = VBAT – 0.2V
100
0.5 µA
100 µA
1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
2. Applies to all input pins except RST, which is pulled internally to VCCI.
3. Measured without RAM connected.
4. ICCO1 is the maximum average load current the device can supply to external memory.
5. Voltages are referenced to Ground.
6. Measured with load shown in Figure 10 on page 19.
7. ICCO2 is the maximum average load current that the device can supply to memory in the battery backup mode.
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