DC and AC parameters
M48Z512A, M48Z512AY, M48Z512AV
Table 9.
Symbol
Power down/up AC characteristics
Parameter(1)
Min
Max
Unit
tF(2)
VPFD (max) to VPFD (min) VCC fall time
300
µs
M48Z512A/Y
10
tFB(3) VPFD (min) to VSS VCC fall time
µs
M48Z512AV 150
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tRB
VSS to VPFD (min) VCC rise time
1
µs
M48Z512A/Y
40
150
tWPT WRITE protect time
µs
M48Z512AV
40
250
) tER E recovery time
40
120
ms
t(s 1. Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75 to 5.5 V, 4.5 to 5.5 V,
or 3.0 to 3.6 V (except where noted).
uc 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/WRITE protection not occurring
until 200 µs after VCC passes VPFD (min).
rod 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
te P Table 10. Power down/up trip points DC characteristics
le Symbol
Parameter(1)(2)
Min Typ Max Unit
oM48Z512A 4.5
4.6 4.75
V
- Obs VPFD Power-fail deselect voltage
M48Z512AY 4.2
4.3
4.5
V
M48Z512AV 2.8
2.9
3.0
V
) M48Z512A/Y
3.0
t(s VSO Battery backup switchover voltage
M48Z512AV
2.5
uc tDR(3) Expected data retention time
10
V
V
Years
rod 1. All voltages referenced to VSS.
2. Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75 to 5.5 V, 4.5 to 5.5 V,
P or 3.0 to 3.6 V (except where noted).
Obsolete3. At 25 °C; VCC = 0 V.
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Doc ID 5146 Rev 9