M58BV016FT7T3T View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M58BV016FT7T3T

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Numonyx -> Micron 

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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Figure 8. Asynchronous bus read AC waveforms

A0-A18

tAVAV

VALID

tAVQV

tLLEL

tEHLX

L

tELQX

tELQV

E

tGLQX

tGLQV

G

DC and AC parameters

tAXQX

tEHQX

tEHQZ

GD

DQ0-DQ31

tGHQX

tGHQZ

OUTPUT

See also Page Read

AI04407C

.

Table 16. Asynchronous bus read AC characteristics

Symbol

Parameter

Test condition

M58BW016

Unit

70 80

tAVAV Address Valid to Address Valid

E = VIL, G = VIL Min 70 80 ns

tAVQV Address Valid to Output Valid

E = VIL, G = VIL Max 70 80 ns

tAXQX Address Transition to Output Transition

E = VIL, G = VIL Min 0

0 ns

tEHLX Chip Enable High to Latch Enable Transition

Min 0 0 ns

tEHQX Chip Enable High to Output Transition

G = VIL

Min 0 0 ns

tEHQZ Chip Enable High to Output Hi-Z

tELQV(1) Chip Enable Low to Output Valid

G = VIL

G = VIL

Max 20 20 ns

Max 70 80 ns

tELQX Chip Enable Low to Output Transition

G = VIL

Min 0 0 ns

tGHQX Output Enable High to Output Transition

E = VIL

Min 0 0 ns

tGHQZ Output Enable High to Output Hi-Z

E = VIL

Max 15 15 ns

tGLQV Output Enable Low to Output Valid

E = VIL

Max 25 25 ns

tGLQX Output Enable to Output Transition

E = VIL

Min 0 0 ns

tLLEL Latch Enable Low to Chip Enable Low

Min 0 0 ns

1. Output Enable G may be delayed up to tELQV - tGLQV after the falling edge of Chip Enable E without

increasing tELQV.

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