MA4E1340 Series
Silicon Medium Barrier Schottky Diodes
Maximum Ratings @ 25 °C (unless otherwise specified) 1
Parameter
Unit
Operating Temperature
°C
Storage Temperature
°C
Total Power Dissipation
(RF and D.C.)
mW
Continuous Forward Current
mA
Surge Forward Current, @ t < 10 millisec
mA
Reverse Voltage
Vb
Soldering Temperature
(Standard Part #)
°C
Soldering Temperature
(RoHS Compliant Part #)
°C
1. Please refer to Application Note M538 for surface mounting instructions
M/A-COM Products
Rev. V8
Values
-55 to +125
-55 to +125
250
15
100
70
+235
+260
Electrical Specifications @ TA = +25 °C
Parameter
Condition
Forward Voltage
IF = 1 mA
Delta Forward Voltage
IF = 1 mA
Forward Voltage
Total Capacitance
Reverse Leakage Current
Reverse Voltage Breakdown
IF = 15 mA
VR = 0 V
F = 1 MHz
VR = 50 V
IR = 10 µA
Symbol
VF
Δ VF
VF
CT
IR
Vb
Specification
410 mV max.
20 mV max.
For series pair and unconnected pair
configurations
1.0 V max.
1.5 pF max.
200 nA max.
70 V min.
3
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
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changes to the product(s) or information contained herein without notice.