MBRS15100CT View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name

Description

MFG CO.

MBRS15100CT

15.0 Ampere Surface Mount Schottky Barrier Rectifiers for PV Application

Thinki Semiconductor Co., Ltd. 

1 2

MBRS1535CT thru MBR15150CT

®

Pb Free Plating Product

MBRS1535CT thru MBR15150CT

Pb

15.0 Ampere Surface Mount Schottky Barrier Rectifiers for PV Application

Features

Plastic material used carries Underwriters

Laboratory Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

260oC/10 seconds,0.25”(6.35mm)from case

TO-263/D2PAK

Unit : inch (mm)

Mechanical Data

Cases: JEDEC TO-263 molded plastic body

Terminals: Pure tin plated, lead free. solderable

per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 2.1 gram approximately

Positive CT AC

Common Cathode

AC

Maximum Ratings and Electrical Characteristics

Rating at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Symbol MBRS MBRS MBRS MBRS MBRS MBRS MBRS Units

1535CT 1545CT 1550CT 1560CT 1590CT 15100CT 15150CT

VRRM

35

45

50

60

90

100 150 V

VRMS

24 31 35 42 63

70

105 V

VDC

35 45 50 60 90 100 150 V

Maximum Average Forward Rectified Current

at Tc=105OC

I(AV)

15

A

Peak Repetitive Forward Current (Rated VR,

Square Wave, 20KHz) at Tc=105oC

IFRM

15

A

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

IFSM

(JEDEC method )

150

A

Peak Repetitive Reverse Surge Current (Note 1) IRRM

1.0

0.5

A

Maximum Instantaneous Forward Voltage at:

(Note 2)

IF=7.5A, TC=25oC

IF=7.5A, TC=125oC

VF

IF=15A, TC=25oC

IF=15A, TC=125oC

0.57

0.84

0.72

－

0.75

0.65

－

－

0.92

1.05

0.82

0.92 V

－

－

－

－

Maximum Instantaneous Reverse Current

@ Tc =25 oC at Rated DC Blocking Voltage

IR

0.5

0.3

@ Tc=125 oC (Note 2)

10

7.5

0.1

mA

5.0

mA

Voltage Rate of Change (Rated VR)

Typical Junction Capacitance

dV/dt

Cj

1,000

400

200

V/uS

pF

Maximum Typical Thermal Resistance (Note 3)

Operating Junction Temperature Range

Storage Temperature Range

RθJA

RθJC

TJ

TSTG

10

1.5

-65 to +150

-65 to +175

oC/W

oC

oC

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Mount on Heatsink Size of 2 “ x 3 “ x 0.25” Al-Plate.

© 2006 Thinki Semiconductor Co.,Ltd.

Page 1/2

http://www.thinkisemi.com/

Share Link: