MC-4R96CPE6C View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

MFG CO.

MC-4R96CPE6C

Direct Rambus™ DRAM RIMM™ Module 96M-BYTE (48M-WORD x 16-BIT)

NEC => Renesas Technology 

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MC-4R96CPE6C

RIMM Module Current Profile

IDD

IDD1

RIMM module power conditions Note1

One RDRAM in Read Note2, balance in NAP mode

-845

MAX.

Unit

711

mA

-745

646

IDD2

One RDRAM in Read Note2, balance in Standby mode

-653

-845

561

1,240

mA

-745

1,150

IDD3

One RDRAM in Read Note2, balance in Active mode

-653

-845

1,015

1,590

mA

-745

1,450

IDD4

One RDRAM in Write, balance in NAP mode

-653

-845

1,265

671

mA

-745

616

IDD5

One RDRAM in Write, balance in Standby mode

-653

-845

536

1,200

mA

-745

1,120

IDD6

One RDRAM in Write, balance in Active mode

-653

-845

990

1,550

mA

-745

1,420

-653

1,240

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the

following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Preliminary Data Sheet M14806EJ2V0DS00

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