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MC9S12DT256C View Datasheet(PDF) - Freescale Semiconductor

Part Name
Description
MFG CO.
'MC9S12DT256C' PDF : 126 Pages View PDF
MC9S12DP256B Device User GFuirdeeescV0a2.l1e5 Semiconductor, Inc.
Table A-6 5V I/O Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max Unit
1 P Input High Voltage
VIH
0.65*VDD5
-
-
V
T Input High Voltage
VIH
-
-
VDD5 + 0.3 V
2 P Input Low Voltage
VIL
-
-
0.35*VDD5
V
T Input Low Voltage
VIL
VSS5 - 0.3
-
-
V
3 C Input Hysteresis
VHYS
250
mV
Input Leakage Current (pins in high impedance input
4 P mode)1
Vin = VDD5 or VSS5
I
in
–2.5
-
2.5
µA
Output High Voltage (pins in output mode)
5 P Partial Drive IOH = –2mA
Full Drive IOH = –10mA
VOH
VDD5 – 0.8
-
-
V
Output Low Voltage (pins in output mode)
6 P Partial Drive IOL = +2mA
Full Drive IOL = +10mA
VOL
-
-
0.8
V
Internal Pull Up Device Current,
7 P tested at VIL Max.
IPUL
-
-
-130
µA
Internal Pull Up Device Current,
8 P tested at V Min.
IH
IPUH
-10
-
-
µA
Internal Pull Down Device Current,
9 P tested at VIH Min.
IPDH
-
-
130
µA
Internal Pull Down Device Current,
10 P tested at VIL Max.
IPDL
10
-
-
µA
11 D Input Capacitance
Cin
6
-
pF
Injection current2
12 T Single Pin limit
Total Device Limit. Sum of all injected currents
IICS
-2.5
-
2.5
mA
IICP
-25
25
13 P Port H, J, P Interrupt Input Pulse filtered3
tPULSE
3
µs
14 P Port H, J, P Interrupt Input Pulse passed3
tPULSE
10
µs
NOTES:
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
2. Refer to Section A.1.4 Current Injection, for more details
3. Parameter only applies in STOP or Pseudo STOP mode.
94
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