MCC200-14IO1 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'MCC200-14IO1' PDF : 3 Pages View PDF
8000
A
6000
ITSM
IFSM
4000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 125°C
106
I2dt
A2s
105
TVJ = 45°C
TVJ = 125°C
400
ITAVM A
IFAVM
300
200
MCC 200
MCD 200
DC
180° sin
120°
60°
30°
2000
100
0
0.001
0.01
0.1
s1
t
104
1
ms 10
t
Fig. 4 Surge overload current
ITSM / FSM: Crest value, t: duration
Fig. 5 Ι2dt versus time (1-10 ms)
0
0 25 50 75 100 125 C 150
TC
Fig. 6 Maximum forward current
at case temperature
400
Ptot
W
300
200
100
DC
180° sin
120°
60°
30°
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
2100
W
1800
Ptot
1500
1200
900
600
300
Circuit
B6
RthKA K/W
0.03
0.04
0.06
0.08
0.1
0.15
0.2
0
0
100 200 A 300 0 25 50 75 100 125 C150
ITRMS/IFRMS
TA
Fig. 7 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
0.30
K/W
ZthJC 0.25
0
0
200 400 A 600 0 25 50 75 100 125 C150
IdAVM
TA
Fig. 8 3~ rectifier bridge: Power dissipation versus
direct output current and ambient temperature
30°
0.20
60°
0.15
Constants for ZthJC calculation (DC):
120°
i
Rthi (K/W)
0.10
180°
DC
1
0.01
2
0.0065
0.05
3
0.025
4
0.0615
5
0.027
0.00
10-3
10-2
10-1
100
101
s
102
t
Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)
ti (s)
0.00014
0.019
0.18
0.52
1.6
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