MID-14422
Optical-Electrical Characteristics
Parameter
Test Conditions
Collector-Emitter
Breakdown Voltage
Ic=0.1mA
Ee=0
Emitter-Collector
Breakdown Voltage
Ic=0.1mA
Ee=0
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Ic=0.5 mA
Ee=0.1mW/cm2
VR =30V , 0=1KΩ
IC=1mA
VCE=10V
Ee=0.1mW/cm2
VCE=5V
Ee=0.1mW/cm2
Symbol Min.
V(BR)CEO
30
V(BR)ECO
5
VCE(SAT)
Tr
Tf
ICEO
IC(ON)
0.25
Typ .
15
15
Max.
@ TA=25oC
Unit
V
V
0.4
V
µS
100
nA
mA
Typical Optical-Electrical Characteristic Curves
1000
100
10
1
0.1
0.01
0.001
0
40 80 120
TA - Ambient Temperature - oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
Vcc = 5 V
160 VRL= 1 V
F = 100 Hz
120 PW = 1 ms
4
3.5
Vce =5 V
Ee =0.1 mW/cm2
3 @λ= 940 nm
2.5
2
1.5
1
0.5
0
-75 -25 25 75 125
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
5
Vce = 5 V
4
3
80
2
40
0
0 2 4 6 8 10
RL - Load Resistance - KΩ
Fig.3 RISE AND FALL TIME
VS LOAD RESISTANCE
1
0
0123456
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
1.0
50°
0.9
60°
70°
0.8
80°
90°
0.5 0.3 0.1 0.2 0.4 0.6
FIG.5 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002