MJE13009L View Datasheet(PDF) - Unspecified
Part Name
Description
MFG CO.
'MJE13009L' PDF : 3 Pages View PDF
Shenzhen SI Semiconductors Co., LTD.
Product Specification
MJE LOW VOLTAGE SERIES TRANSISTORS
MJE13009L
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
APPLICATION: SUITABLE FOR 110V CIRCUIT MODE
FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
VALUE
400
200
9
20
80
150
-65-150
TO-220
UNIT
V
V
V
A
W
°C
°C
Electronic Characteristics Tc=25°C
CHARACTERISTICS
SYMBOL
Collector-Base Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
Collector-Emitter Saturation Voltage Vces
Base-Emitter Saturation Voltage
DC Current Gain
Vbes
hFE
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=2.0A,IB=0.4A
IC=8.0A,IB=1.6A
IC=12.0A,IB=3.0A
IC=5.0A,IB=1.0A
VCE=5V,IC=10 mA
VCE=5V,IC=2.0 A
VCE=5V,IC=15.0 A
MIN
200
9
8
10
5
MAX
100
250
0.5
1.0
2.0
1.5
UNIT
A
A
V
V
V
V
40
Si semiconductors 2004.10
1
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