MMBT5401 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
'MMBT5401' PDF : 4 Pages View PDF
MMBT5401
■ TYPICAL CHARACTERICS
PNP EPITAXIAL SILICON TRANSISTOR
Fig.1 Collector output Capacitance
20
16
f=1MHz
IE=0
12
8
4
0
-100
-10 1
-102
Collector-Base voltage (V)
Fig.3 Base-Emitter on Voltage
-103
VCE=-5V
-102
Fig.2 DC current Gain
103
VCE=-5V
102
101
100
-10-1
-100
-101
-102
-103
Ic,Collector current (mA)
Fig.4 Saturation voltage
-101
Ic=10*IB
-100
VBE(sat)
-10 1
-100
0
-0 .2
- 0 .4
-0.6
-0.8 -1.0
Base-Emitter voltage (V)
Fig.5 Current gain -bandwidth
product
103
VCE=-10V
102
-10-1
VCE(sat )
-10-2
-10-1
-100
-101
-102
-103
Ic,Collector current (mA)
101
100
-10-1
-100
-10 1
-102
-103
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-011.C
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