MMST2907A View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

MMST2907A

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

1 2 3

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

MMST2907A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Collector input capacitance

Turn-on time

Delay time

Rise time

Turn-off time

Storage time

Fall time

V(BR)CBO IC=-10μA,IE=0

-60

V

V(BR)CEO

IC=-10mA,IB=0

-50

V

V(BR)EBO IE=-10μA,IC=0

-5

V

ICBO

hFE

VCE(sat)

VBE(sat)

fT

Cobo

Cibo

ton

td

tr

toff

ts

tf

VCB=-50V,IE=0

-10 nA

VCE=-10V,IC=-0.1mA

VCE=-10V,IC=-1.0mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-150mA

VCE=-10V,IC=-500mA

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

IC=-150mA, IB=-15mA

IC=-150mA, IB=-15mA

VCE=-12V, IC= -2mA

f=30MHz

75

100

100

100 300

50

-0.4

V

-1.6

-1.3

V

-2.6

140

MHz

VCB=-10V,IE=0,f=1MHz

8

pF

VEB=-2.0V,IC=0,f=1MHz

30 pF

VCC=-30V,IC=-150mA,

IB1=-15mA

VCC=-6.0V,IC=-150mA,

IB1=IB2=-15mA

Document number: BL/SSSTF050

Rev.A

www.galaxycn.com

2

Share Link: