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MPSA12 View Datasheet(PDF) - Micro Commercial Components

Part Name
Description
MFG CO.
MPSA12
MCC
Micro Commercial Components MCC
'MPSA12' PDF : 3 Pages View PDF
1 2 3
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
This device is designed for applications requiring extremely high
current gain at current to 1.0A
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
x Marking:MPSA12
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings*
Symbol
Rating
VCEO
VCBO
VEBO
IC
TJ
TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Rating
Unit
20
V
20
V
10
V
1.2
A
-55 to +150
OC
-55 to +150
OC
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25OC
RJ C
Thermal Resistance, Junction to Case
RJA
Thermal Resistance, Junction to Ambient
625
5.0
83.3
200
mW
mW/OC
OC/W
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CES
Collector-Emitter Breakdown Voltage
(IC=100uAdc, IE=0)
ICBO
Collector Cutoff Current
(VCB=15Vdc, IE=0)
IEBO
Emitter Cutoff Current
(VEB=10Vdc, IC=0)
ICES
Emitter Cutoff Current
(VCB=15Vdc, IC=0)
ON CHARACTERISTICS(3)
20
---
Vdc
---
100 nAdc
---
100 nAdc
---
100 nAdc
hFE
VCE(sat)
VBE(on)
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
Collector-Emitter Saturation Voltage
(I C=10mAdc, IB=0.01mAdc)
Base-Emitter On Voltage
(IC=10mAdc, VCE=5.0Vdc)
20000 ---
---
---
1.0 Vdc
---
1.4 Vdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
3. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
MPSA12
NPN Darlington
Transistor
TO-92
A
E
B
C
D
CB E
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.170
.190
B
.170
.190
C
.550
.590
D
.010
.020
E
.130
.160
G
.096
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision: 6
www.mccsemi.com
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2010/08/18
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