MPSA42 View Datasheet(PDF) - Weitron Technology

Part Name

Description

MFG CO.

MPSA42

NPN SiliconGeneral Purpose Transistors

Weitron Technology 

1 2 3

NPN Silicon General Purpose Transistors

MPSA42

TO-92

1

1. EMITTER

2. BASE

2

3

3. COLLECTOR

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

TJ, Tstg

Junction and Storage Temperature

RӨJA

RӨJC

Thermal Resistance, junction to Ambient

Thermal Resistance, unction to Case

Value

310

305

5

500

-55-150

200

83.3

Units

V

V

V

mA

℃

℃/mW

℃/mW

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise

Parameter

Symbol Test conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V(BR)CBO

V(BR)CEO

Ic=100uA, IE=0

Ic=1mA, IB=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)EBO

ICBO

IEBO

IE=100µA, IC=0

VCB=200V, IE=0

VEB=5V, IC=0

DC current gain

Collector-emitter saturation voltage

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=30mA

IC=20mA, IB=2mA

Base-emitter saturation voltage

Transition frequency

VBE(sat)

fT

IC=20mA, IB=2mA

VCE=20V, IC=10mA,f=30MHZ

specified)

MIN

310

305

5

60

80

75

50

TYP

MAX

0.25

0.1

UNIT

V

V

V

µA

µA

250

0.2

V

0.9

V

MHz

CLASSIFICATION OF hFE(2)

Rank

A

Range

80-100

B1

100-150

B2

150-200

C

200-250

WEITRON

http://www.weitron.com.tw

Share Link: