MPSA42 View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

MFG CO.

MPSA42

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Zetex => Diodes 

1 2

NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 2 – MARCH 94

FEATURES

* High voltage

MPSA42

APPLICATIONS

* Telephone dialler circuit

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

300

300

6

500

680

-55 to +175

UNIT

V

V

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 300

V

IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO 300

V

IC=1mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO 6

V

IE=100µA, IC=0

Collector Cut-Off

ICBO

Current

0.1

µA

VCB=200V, IE=0

Emitter Cut-Off Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

0.1

µA

VEB=6V, IC=0

0.5 V

IC=20mA, IB=2mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.9 V

IC=20mA, IB=2mA*

Static Forward Current hFE

25

Transfer Ratio

40

40

Transition

Frequency

fT

50

MHz

IC=1mA, VCE=10V*

IC=10mA, VCE=10V*

IC=30mA, VCE=10V*

IC=10mA, VCE=20V

f=20MHz

Output Capacitance

Cobo

6

pF

VCB=20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-78

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