MPSA44 View Datasheet(PDF) - Transys Electronics Limited
Part Name
Description
MFG CO.
'MPSA44' PDF : 4 Pages View PDF
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
EBC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
*hFE
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
Collector Emitter Saturation Voltage *VCE (sat)
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=10mA, IB=1mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
Input Capacitance
Small Signal Current Gain
SYMBOL
Cobo
Cibo
hfe
TEST CONDITION
VCB=20V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
IC=10mA, VCE=10V, f=10MHz
*Pulse test: Pulse Width <300µs, Duty Cycle<2%
MPSA44
MPSA45
TO-92
Plastic Package
MIN
MAX
UNITS
40
50
200
45
40
0.40
V
0.50
V
0.75
V
0.75
V
MIN
MAX
UNITS
7
pF
130
pF
2
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