MPSA44B View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
'MPSA44B' PDF : 4 Pages View PDF
UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage: VCEO=400V
*Collector current up to 300mA
*Complement to MPSA94
*Collector Dissipation: Pc(max)=625mW
1
TO-92
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25℃)
Collector dissipation(Tc=25℃)
VCBO
VCEO
VEBO
Pc
Pc
Collector current
Ic
Junction Temperature
Tj
Storage Temperature
Tstg
1: BASE 2: EMITTER 3: COLLECTOR
*Pb-free plating product number: MPSA44BL
RATINGS
500
400
6
625
1.5
300
150
-55 ~ +150
UNIT
V
V
V
mW
W
mA
℃
℃
ELECTRICAL CHARACTERISTICS
(Tj=25℃,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-base breakdown voltage
BVCBO Ic=100µA, IB=0
500
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BVCEO
BVEBO
ICBO
ICES
IEBO
Ic=1mA, IB=0
IE=100µA, Ic=0
VCB=400V,IE=0
VCE=400V,IB=0
VEB=4V,Ic=0
400
V
6
V
0.1
µA
0.5
µA
0.1
µA
VCE=10V, Ic=1mA
40
DC current gain(note)
hFE
VCE=10V, Ic=10mA
VCE=10V, Ic=50mA
50
240
45
VCE=10V, Ic=100mA
40
Ic=1mA, IB=0.1mA
0.4
Collector-emitter saturation voltage
VCE(sat) Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
0.5
V
0.75
Base-emitter saturation voltage
VBE(sat) Ic=10mA, IB=1mA
0.75
V
Current gain bandwidth product
fT
VCE=20V, Ic=10mA, f=100MHz
50
MHz
Output capacitance
Cob VCB=20V, IE=0, f=1MHz
7
pF
UTC UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
1
QW-R201-079,B
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