MPSA44/45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
MPSA44
MPSA45
MPSA44
MPSA45
SOT-89
TO-92
SYMBOL
VCBO
VCEO
VEBO
IC
PC
RATINGS
500
400
400
350
6
300
500
625
UNIT
V
V
V
mA
mW
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown MPSA44
Voltage
MPSA45
Collector-Emitter
MPSA44
Breakdown Voltage
MPSA45
Emitter-Base Breakdown Voltage
Collector Cutoff Current
MPSA44
MPSA45
Collector Cutoff Current
Emitter Cutoff Current
MPSA44
MPSA45
ON CHARACTERISTICS
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
DC Current Gain (Note)
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
Output Capacitance
COB
Note: Pulse test: PW<300μs, Duty Cycle<2%
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=400V, IE=0
VCB=320V, IE=0
VCE=400V, IB=0
VCE=320V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=20V,I C=10mA, f=100MHz
VCB=20V, IE=0 f=1MHz
MIN TYP MAX UNIT
500
400
V
400
V
350
6
V
0.1
μA
0.1
0.5 μA
0.5
0.1 μA
40
240
82
240
45
240
40
240
0.4
0.5 V
0.75
0.75 V
50
MHz
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-006, G