MRF9045LR1 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

MFG CO.

MRF9045LR1

RF Power Field Effect Transistors

Freescale Semiconductor 

1 2 3 4 5 6 7 8 9 10

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 μAdc)

VGS(th)

2

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 350 mAdc)

VGS(Q)

—

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs

—

Dynamic Characteristics

Input Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

Typ

—

—

—

3

3.7

0.19

4

69

37

1.5

Max

Unit

10

μAdc

1

μAdc

1

μAdc

4

Vdc

—

Vdc

0.4

Vdc

—

S

—

pF

—

pF

—

pF

(continued)

MRF9045LR1 MRF9045LSR1

2

RF Device Data

Freescale Semiconductor

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