MRF9060LSR1 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

MFG CO.

MRF9060LSR1

RF Power Field Effect Transistor

Freescale Semiconductor 

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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

Gate−Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

VGS(th)

2

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 450 mAdc)

VGS(Q)

—

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 1.3 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 4 Adc)

VDS(on)

—

gfs

—

Dynamic Characteristics

Input Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

Typ

—

—

—

2.9

3.7

0.17

5.3

98

50

2

Max

Unit

10

µAdc

1

µAdc

1

µAdc

4

Vdc

—

Vdc

0.4

Vdc

—

S

—

pF

—

pF

—

pF

(continued)

MRF9060LR1 MRF9060LSR1

5−2

RF Device Data

Freescale Semiconductor

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