MSA-0470 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.7 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 115°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
∆GP
Gain Flatness
f = 0.1 GHz
f = 0.1 to 2.5 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3
Third Order Intercept Point
f = 1.0 GHz
tD
Group Delay
f = 1.0 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 7.5
dB
GHz
dB
dBm
dBm
psec
V 4.75
mV/°C
Typ. Max.
8.5 9.5
± 0.6 ± 1.0
4.0
1.7:1
2.0:1
6.5
12.5
25.5
125
5.25 5.75
–8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
6-335