2
MSA-0670 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
50 mA
200 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 174°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 130°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 0.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3
Third Order Intercept Point
f = 0.5 GHz
tD
Group Delay
f = 0.5 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 19.0
dB
GHz
dB
dBm
dBm
psec
V
3.1
mV/°C
Typ. Max.
20.5 22.0
±0.7 ±1.0
1.0
1.9:1
1.8:1
2.8 4.0
2.0
14.5
200
3.5 3.9
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.