1Semiconductor
FEDD5116160F-02
MSM5116160F
AC CHARACTERISTICS (1/2)
Parameter
Symbol
MSM5116160
F-50
Min. Max.
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
MSM5116160
F-60
MSM5116160
F-70
Unit Note
Min. Max. Min. Max.
Random Read or Write Cycle Time tRC
90

110

130
 ns
Read Modify Write Cycle Time
tRWC 131

155

185
 ns
Fast Page Mode Cycle Time
tPC
35

40

45
 ns
Fast Page Mode Read Modify Write
Cycle Time
tPRWC
76

85

100
 ns
Access Time from RAS
tRAC

50

60

70 ns 4, 5, 6
Access Time from CAS
tCAC

13

15

20 ns 4, 5
Access Time from Column Address tAA

25

30

35 ns 4, 6
Access Time from CAS Precharge tCPA

30

35

40 ns 4, 12
Access Time from OE
tOEA

13

15

20 ns 4
Output Low Impedance Time from
CAS
tCLZ
0

0

0
 ns 4
CAS to Data Output Buffer Turn-
off Delay Time
tOFF
0
13
0
15
0
20 ns 7
OE to Data Output Buffer Turn-off
Delay Time
tOEZ
0
13
0
15
0
20 ns 7
Transition Time
tT
3
50
3
50
3
50 ns 3
Refresh Period
tREF
RAS Precharge Time
tRP
RAS Pulse Width
tRAS
RAS Pulse Width (Fast Page Mode) tRASP
RAS Hold Time
tRSH
RAS Hold Time referenced to OE
tROH
CAS Precharge Time
(Fast Page Mode)
tCP

64

64

64 ms
30

40

50
 ns
50 10,000 60 10,000 70 10,000 ns
50 100,000 60 100,000 70 100,000 ns
13

15

20
 ns
13

15

20
 ns
7

10

10
 ns 14
CAS Pulse Width
tCAS 13 10,000 15 10,000 20 10,000 ns
CAS Hold Time
tCSH
50

60

70
 ns
CAS to RAS Precharge Time
tCRP
5

5

5
 ns 12
RAS Hold Time from CAS Precharge tRHCP 30

35

40
 ns 12
RAS to CAS Delay Time
tRCD
17
37
20
45
20
50 ns 5
RAS to Column Address Delay Time tRAD 12
25
15
30
15
35 ns 6
Row Address Set-up Time
tASR
0

0

0
 ns
6/15