1Semiconductor
FEDD5116400F-01
MSM5116400F
AC CHARACTERISTICS (1/2)
Parameter
Symbol
(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3,11,12
MSM5116400 MSM5116400 MSM5116400
F-50
F-60
F-70
Unit Note
Min. Max. Min. Max. Min. Max.
Random Read or Write Cycle Time tRC
90

110

130
 ns
Read Modify Write Cycle Time
tRWC 131

155

185
 ns
Fast Page Mode Cycle Time
tPC
35

40

45
 ns
Fast Page Mode Read Modify Write
Cycle Time
tPRWC
76

85

100
 ns
Access Time from RAS
tRAC

50

60

70 ns 4, 5, 6
Access Time from CAS
tCAC

13

15

20 ns 4, 5
Access Time from Column Address tAA

25

30

35 ns 4, 6
Access Time from CAS Precharge tCPA

30

35

40 ns 4
Access Time from OE
tOEA

13

15

20 ns 4
Output Low Impedance Time from
CAS
tCLZ
0

0

0
 ns 4
CAS to Data Output Buffer Turn-
off Delay Time
tOFF
0
13
0
15
0
20 ns 7
OE to Data Output Buffer Turn-off
Delay Time
tOEZ
0
13
0
15
0
20 ns 7
Transition Time
tT
3
50
3
50
3
50 ns 3
Refresh Period
tREF

64

64

64 ms
RAS Precharge Time
tRP
30

40

50
 ns
RAS Pulse Width
tRAS 50 10,000 60 10,000 70 10,000 ns
RAS Pulse Width (Fast Page Mode) tRASP 50 100,000 60 100,000 70 100,000 ns
RAS Hold Time
tRSH
13

15

20
 ns
RAS Hold Time referenced to OE tROH 13

15

20
 ns
CAS Precharge Time
(Fast Page Mode)
tCP
7

10

10
 ns
CAS Pulse Width
tCAS 13 10,000 15 10,000 20 10,000 ns
CAS Hold Time
tCSH
50

60

70
 ns
CAS to RAS Precharge Time
tCRP
5

5

5
 ns
RAS Hold Time from CAS Precharge tRHCP 30

35

40
 ns
RAS to CAS Delay Time
tRCD
17
37
20
45
20
50 ns 5
RAS to Column Address Delay Time tRAD 12
25
15
30
15
35 ns 6
Row Address Set-up Time
tASR
0

0

0
 ns
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