1Semiconductor
FEDD5118165F-01
MSM5118165F
AC CHARACTERISTICS (2/2)
Parameter
Symbol
OE Hold Time from CAS
(DQ Disable)
tCHO
RAS to CAS Delay Time
tRCD
RAS to Column Address Delay Time tRAD
Row Address Set-up Time
tASR
Row Address Hold Time
tRAH
Column Address Set-up Time
tASC
Column Address Hold Time
tCAH
Column Address to RAS Lead Time tRAL
Read Command Set-up Time
tRCS
Read Command Hold Time
Read Command Hold Time
referenced to RAS
tRCH
tRRH
Write Command Set-up Time
tWCS
Write Command Hold Time
tWCH
Write Command Pulse Width
tWP
WE Pulse Width (DQ Disable)
tWPE
OE Command Hold Time
tOEH
OE Precharge Time
tOEP
OE Command Hold Time
tOCH
Write Command to RAS Lead Time tRWL
Write Command to CAS Lead Time tCWL
Data-in Set-up Time
tDS
Data-in Hold Time
OE to Data-in Delay Time
tDH
tOED
CAS to WE Delay Time
tCWD
Column Address to WE Delay Time tAWD
RAS to WE Delay Time
tRWD
CAS Precharge WE Delay Time
CAS Active Delay Time from RAS
Precharge
tCPWD
tRPC
RAS to CAS Set-up Time
(CAS before RAS)
tCSR
RAS to CAS Hold Time
(CAS before RAS)
tCHR
MSM5118165
F-50
Min. Max.
5

11
37
9
25
0

7

0

7

25

0

0

0

0

7

7

7

7

7

7

7

7

0

7

13

30

42

67

47

5

5

10

(VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3
MSM5118165
F-60
MSM5118165
F-70
Unit Note
Min. Max. Min. Max.
5

5
 ns
14
45
14
50 ns 5
12
30
12
35 ns 6
0

0
 ns
10

10
 ns
0

0
 ns 12
10

13
 ns 12
30

35
 ns
0

0
 ns 12
0

0
 ns 9,12
0

0
 ns 9
0

0
 ns 10,12
10

13
 ns 12
10

10
 ns
10

10
 ns
10

13
 ns
10

10
 ns
10

10
 ns
10

13
 ns
10

13
 ns 14
0

0
 ns 11,12
10

13
 ns 11,12
15

20
 ns
34

44
 ns 10
49

59
 ns 10
79

94
 ns 10
54

64
 ns 10
5

5
 ns 12
5

5
 ns 12
10

10
 ns 13
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