1Semiconductor
FEDD51V17800F-01
MSM51V17800F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage VCC Supply relative to VSS
VT
–0.5 to 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
–55 to 150
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power Supply Voltage
VCC
3.0
3.3
3.6
V
VSS
0
0
0
V
Input High Voltage
VIH
2.0

VCC + 0.3*1
V
Input Low Voltage
VIL
− 0.3*2

0.8
V
Notes: *1. The input voltage is VCC + 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which VCC is applied).
*2. The input voltage is VSS − 1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which VSS is applied).
PIN CAPACITANCE
Parameter
Input Capacitance (A0 – A9, A10R)
Input Capacitance
(RAS, CAS, WE, OE)
Output Capacitance (DQ1 – DQ8)
Symbol
CIN1
CIN2
CI/O
(Vcc = 3.3V ± 0.3V, Ta = 25°C, f = 1 MHz)
Min.
Max.
Unit
—
5
pF
—
7
pF
—
7
pF
4/15