MSM5718B70
¡ Semiconductor
ABSOLUTE MAXIMUM RATINGS
The following table represents stress ratings only, and functional operation at the maximum ratings
is not guaranteed. Extended exposure to the maximum ratings may affect device reliability.
Although these devices contain protective circuitry to resist damage from static electric discharge,
always take precautions to avoid high static voltages or electric fields.
Symbol
VI,ABS
VI,TTL,ABS
VDD,ABS
TJ,ABS
TSTORE
Parameter
Voltage applied to any RSL pin with respect to Gnd
Voltage applied to any TTL pin with respect to Gnd
Voltage on VDD with respect to Gnd
Junction temperature under bias
Storage temperature
Min.
–0.5
–0.5
–0.5
–55
–55
Max.
VDD,MAX+0.5
VDD+0.5
VDD,MAX+1.0
125
125
Unit
V
V
V
°C
°C
THERMAL PARAMETERS
Symbol
TJ
TC
QJC
Parameter and Conditions
Junction operating temperature
Package surface temperature
Junction-to-Case thermal resistance
CAPACITANCE
Symbol
CI
CI,TTL
Parameter and Conditions
Low-swing input parasitic capacitance
TTL input parasitic capacitance
Min.
0
—
—
Max.
100
90
5
Unit
°C
°C
°C/Watt
Min.
—
—
Max. Unit
2
pF
8
pF
POWER CONSUMPTION
Mode
Powerdown
Standby
Active
Read
Write
Description
Device shut down
Device inactive
Device evaluating request packet
Data being transferred from device (@Burst Length = 256)
Data being transferred to device (@Burst Length = 256)
Notes:
a. 500 MHz rank
b. 533 MHz rank
c. 600 MHz rank
Min.
—
—
—
—
—
(Ta = 0˚C to 70˚C)
Max.
20a/20b/30c
330a/340b/360c
0.9a/0.95b/1.0c
1.4a/1.5b/1.6c
1.3a/1.4b/1.5c
Unit
mW
mW
W
W
W
26