¡ Semiconductor
MSM82C51A-2RS/GS/JS
Differences between MSM82C51A and MSM82C51A-2
1) Manufacturing Process
These devices use a 3 m Si-Gate CMOS process technology and have the same chip size.
2) Function
These devices have the same logics except for changes in AC characteristics listed in (3-2).
3) Electrical Characteristics
3-1) DC Characteristics
Parameter
VOL measurement conditions
VOH measurement conditions
Symbol
IOL
IOH
MSM82C51A
+2.0 mA
-400 mA
MSM82C51A-2
+2.5 mA
-2.5 mA
Although the output voltage characteristics of these devices are identical, but the measurement
conditions of the MSM82C51A-2 are more restricted than the MSM82C51A.
3-2) AC Characteristics
Parameter
RD Pulse Width
RD Rising to Data Difinition
RD Rising to Data Float
WR Pulse Width
Data Setup Time for WR Rising
Data Hold Time for WR Rising
Master Clock Period
Clock Low Time
Clock High Time
Symbol
tRR
tRD
tRF
tWW
tDW
tWD
tCY
tf
tf
MSM82C51A
250 ns minimum
200 ns maximum
100 ns maximum
250 ns minimum
150 ns minimum
20 ns minimum
250 ns minimum
90 ns minimum
120 ns minimum
tCY-90 ns maximum
MSM82C51A-2
130 ns minimum
100 ns maximum
75 ns minimum
100 ns minimum
100 ns minimum
0 ns minimum
160 ns minimum
50 ns minimum
70 ns minimum
tCY-50 ns maximum
As shown above, the MSM82C51A-2 satisfies the characteristics of the MSM82C51A.
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