2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
SINGLE ASYNCHRONOUS READ OPERATION
A0–A20 VIH
VIL
tRC
VALID ADDRESS
tAA
tOD
VIH
CE# VIL
VIH
OE# VIL
VIH
WE#
VIL
VOH
DQ0–DQ15 VOL
VIH
RP#
VIL
High-Z
tACE
tRWH
tAOE
tOH
VALID OUTPUT
UNDEFINED
READ TIMING PARAMETERS
(VCC = 1.65V–1.95V)
SYMBOL
tAA
tACE
tAOE
tRWH
tOD
tOH
tRC
-10
VCC = 1.65V–1.95V
MIN
MAX
100
100
30
200
25
0
100
-11
VCC = 1.65V–1.95V
MIN
MAX
110
110
30
200
25
0
110
UNITS
ns
ns
ns
ns
ns
ns
ns
READ TIMING PARAMETERS
(VCC = 1.80V–2.20V)
SYMBOL
tAA
tACE
tAOE
tRWH
tOD
tOH
tRC
-10
-11
VCC = 1.80V–2.20V VCC = 1.80V–2.20V
MIN
MAX
MIN
MAX UNITS
95
100
ns
95
100
ns
30
30
ns
150
150
ns
25
25
ns
0
0
ns
95
100
ns
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
36
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©2002, Micron Technology, Inc.