MT28F640J3FS-12F View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT28F640J3FS-12F' PDF : 52 Pages View PDF
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
RECOMMENDED DC ELECTRICAL CHARACTERISTICS (continued)
Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC)
DESCRIPTION
VCC Program or Set
Lock Bits Current
VCC Block Erase or Clear
Block Lock Bits Current
VCC Program Suspend or
Block Erase Suspend
Current
VPEN Lockout during
Program, Erase, and
Lock Bit Operations
VPEN during Block Erase,
Program, or Lock Bit
Operations
VCC Lockout Voltage
CONDITIONS
CMOS inputs, VPEN = VCC
TTL inputs, VPEN = VCC
CMOS inputs, VPEN = VCC
TTL inputs, VPEN = VCC
Device is disabled
SYMBOL
ICC5
ICC6
ICC7
TYP
22
24
20
22
MAX
60
70
70
80
10
VPENLK
1
VPENH
2.7
3.6
VLKO
2.2
UNITS NOTES
mA 1, 4
mA
mA 1, 4
mA
mA
1
V 5, 6, 7
V
6, 7
V
8
NOTE:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
2. Includes STS.
3. CMOS inputs are either VCC ±0.2V or VSS ±0.2V. TTL inputs are either VIL or VIH.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device deselected. If the device is read or written while in erase suspend mode,
the device’s current draw is ICCR or ICCW.
6. Block erase, programming, and lock bit configurations are inhibited when VPEN ≤ VPENLK, and they are not guaranteed in
the range between VPENLK (MAX) and VPENH (MIN), or above VPENH (MAX).
7. Typically, VPEN is connected to VCC.
8. Block erase, programming, and lock bit configurations are inhibited when VCC < VLKO, and they are not guaranteed in
the range between VLKO (MIN) and VCC (MIN), or above VCC (MAX).
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
41
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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