MT28F800B5WG-8T View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT28F800B5WG-8T' PDF : 30 Pages View PDF
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
RECOMMENDED DC WRITE/ERASE CONDITIONS1
Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +5V ±10%
PARAMETER/CONDITION
VPP WRITE/ERASE lockout voltage
VPP voltage during WRITE/ERASE operation
Boot block unlock voltage
VCC WRITE/ERASE lockout voltage
SYMBOL
VPPLK
VPPH
VHH
VLKO
MIN
–
4.5
10
2
MAX
1.5
5.5
12.6
–
UNITS
V
V
V
V
NOTES
2
3
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +5V ±10%
PARAMETER/CONDITION
WORD WRITE CURRENT: VCC SUPPLY
WORD WRITE CURRENT: VPP SUPPLY
BYTE WRITE CURRENT: VCC SUPPLY
BYTE WRITE CURRENT: VPP SUPPLY
ERASE CURRENT: VCC SUPPLY
ERASE CURRENT: VPP SUPPLY
ERASE SUSPEND CURRENT: VCC SUPPLY
(ERASE suspended)
ERASE SUSPEND CURRENT: VPP SUPPLY
(ERASE suspended)
SYMBOL
ICC9
IPP3
ICC10
IPP4
ICC11
IPP5
ICC12
IPP6
MAX
25
20
25
20
30
40
10
200
UNITS
mA
mA
mA
mA
mA
mA
mA
NOTES
4
4
5
5
6
µA
Notes: 1. WRITE operations are tested at VPP voltages equal to or less than the previous erase.
2. Absolute WRITE/ERASE protection when VPP ≤ VPPLK.
3. When 5V VCC and VPP are used, VCC cannot exceed VPP by more than 500mV during WRITE and ERASE
operations.
4. Applies to MT28F800B5 only.
5. Applies to MT28F008B5 and MT28F800B5 with BYTE# = LOW.
6. Parameter is specified when device is not accessed. Actual current draw will be Icc12 plus read current if a READ
is executed while the device is in erase suspend mode.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
23Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
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