MT46V32M4-1 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT46V32M4-1' PDF : 68 Pages View PDF
PRELIMINARY
128Mb: x4, x8, x16
DDR SDRAM
PIN DESCRIPTIONS (continued)
TSOP PIN NUMBERS SYMBOL
51
16, 51
DQS
LDQS, UDQS
TYPE
I/O
3, 9, 15, 55, 61
6, 12, 52, 58, 64
1, 18, 33
34, 48, 66
49
14, 17, 19, 25,
42, 43, 53
50
VDDQ
VSSQ
VDD
VSS
VREF
NC
DNU
Supply
Supply
Supply
Supply
Supply
–
–
DESCRIPTION
Data Strobe: Output with read data, input with write data. DQS is
edge-aligned with read data, centered in write data. It is used to
capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS is
DQS for DQ8-DQ15. Pin 16 is NC on x4 and x8.
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved
noise immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
No Connect: These pins should be left unconnected.
Do Not Use: Must float to minimize noise.
RESERVED NC PINS1
TSOP PIN NUMBERS
42
17
SYMBOL
A12
A13
TYPE
I
I
DESCRIPTION
Address input for 256Mb and 512Mb devices.
Address input for 1Gb devices.
NOTE: 1. NC pins not listed may also be reserved for other uses now or in the future. This table simply defines specific NC pins
deemed to be of importance.
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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