MT48H8M32LFBF-8LIT View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48H8M32LFBF-8LIT' PDF : 71 Pages View PDF
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Operations
Figure 10: Example: Meeting tRCD (MIN) When 2 < tRCD (MIN)/tCK < 3
CLK
COMMAND
T0
T1
T2
T3
tCK
ACTIVE
tCK
NOP
NOP
tRCD (MIN)
tCK
READ or
WRITE
DON’T CARE
READs
READ bursts are initiated with a READ command, as shown in Figure 11.
The starting column and bank addresses are provided with the READ command, and
auto precharge is either enabled or disabled for that burst access. If auto precharge is
enabled, the row being accessed is precharged at the completion of the burst. For the
generic READ commands used in the following illustrations, auto precharge is disabled.
During READ bursts, the valid data-out element from the starting column address will
be available following the CL after the READ command. Each subsequent data-out
element will be valid by the next positive clock edge. Figure 7 on page 16 shows general
timing for each possible CL setting.
Figure 11: READ Command
CLK
CKE HIGH
CS#
RAS#
CAS#
WE#
A0–A8
A9, A11
A10
BA0, BA1
COLUMN
ADDRESS
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
BANK
ADDRESS
DON’T CARE
Upon completion of a burst, assuming no other commands have been initiated, the DQs
will go High-Z.
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
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©2006 Micron Technology, Inc. All rights reserved.
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