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MT48LC128M4A2P-7ELITC View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
MT48LC128M4A2P-7ELITC
Micron
Micron Technology Micron
'MT48LC128M4A2P-7ELITC' PDF : 68 Pages View PDF
512Mb: x4, x8, x16 SDRAM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Table 10: Absolute Maximum Ratings
Parameter
VDD supply voltage relative to VSS
VDDQ supply voltage relative to VSS
Voltage on any pin relative to VSS
SDRAM device temperatures
Power dissipation
Symbol
VDD
VDDQ
VIN, VOUT, NC
TA
Commercial
Industrial
Storage (plastic)
Min
–1.0
–1.0
–1.0
0
–40
–55
Max
+4.6
+4.6
+4.6
+70
+85
+155
+1
Units
V
V
V
°C
°C
°C
W
Notes
1
1
1
Note:
For further information, refer to technical note TN-00-08: Thermal Applications, available
on Micron’s Web site.
Temperature and Thermal Impedance
It is imperative that the SDRAM device’s temperature specifications, shown in Table 11
on page 43, be maintained to ensure the junction temperature is in the proper operating
range to meet data sheet specifications. An important step in maintaining the proper
junction temperature is using the device’s thermal impedances correctly. The thermal
impedances are listed in Table 12 on page 43 for the applicable die revision and pack-
ages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 12 on page 43. To ensure the compatibility of current and future designs,
contact Micron Applications Engineering to confirm thermal impedance values. The
SDRAM device’s safe junction temperature range can be maintained when the TC speci-
fication is not exceeded. In applications where the device’s ambient temperature is too
high, use of forced air and/or heat sinks may be required to satisfy the case temperature
specifications.
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
42
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000 Micron Technology, Inc. All rights reserved.
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