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MT48LC16M4A2TG View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
MT48LC16M4A2TG
Micron
Micron Technology Micron
'MT48LC16M4A2TG' PDF : 55 Pages View PDF
before the clock edge at which the last desired data
element is valid, where x equals the CAS latency minus
one. This is shown in Figure 7 for CAS latencies of two
and three; data element n + 3 is either the last of a burst
of four or the last desired of a longer burst. The 64Mb
SDRAM uses a pipelined architecture and therefore
64Mb: x4, x8, x16
SDRAM
does not require the 2n rule associated with a prefetch
architecture. A READ command can be initiated on any
clock cycle following a previous READ command. Full-
speed random read accesses can be performed to the
same bank, as shown in Figure 8, or each subsequent
READ may be performed to a different bank.
Figure 7
Consecutive READ Bursts
T0
T1
T2
T3
CLK
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
ADDRESS
BANK,
COL n
X = 1 cycle
BANK,
COL b
DQ
CAS Latency = 2
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
b
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
ADDRESS
BANK,
COL n
DQ
CAS Latency = 3
BANK,
COL b
X = 2 cycles
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
b
TRANSITIONING DATA
DON’T CARE
NOTE: Each READ command may be to any bank. DQM is LOW.
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology, Inc.
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