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MT48LC64M4A2 View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
MT48LC64M4A2
Micron
Micron Technology Micron
'MT48LC64M4A2' PDF : 86 Pages View PDF
256Mb: x4, x8, x16 SDRAM
Electrical Specifications – AC Operating Conditions
Electrical Specifications – AC Operating Conditions
Table 12: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–5 apply to all parameters and conditions
-6A
-7E
-75
Parameter
Symbol Min Max Min Max Min Max
Access time from CLK
(positive edge)
CL = 3 tAC(3)
5.4
5.4
5.4
CL = 2 tAC(2)
7.56
5.4
6
CL = 1 tAC(1)
176
Address hold time
tAH
0.8
0.8
0.8
Address setup time
tAS
1.5
1.5
1.5
CLK high-level width
tCH
2.5
2.5
2.5
CLK low-level width
tCL
2.5
2.5
2.5
Clock cycle time
CL = 3 tCK(3)
6
7
7.5
CL = 2 tCK(2) 106
7.5
10
CL = 1 tCK(1) 206
CKE hold time
tCKH
0.8
0.8
0.8
CKE setup time
tCKS
1.5
1.5
1.5
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
0.8
0.8
CS#, RAS#, CAS#, WE#, DQM setup time tCMS
1.5
1.5
1.5
Data-in hold time
tDH
0.8
0.8
0.8
Data-in setup time
tDS
1.5
1.5
1.5
Data-out High-Z time
CL = 3 tHZ(3)
5.4
5.4
5.4
CL = 2 tHZ(2)
7.56
5.4
6
CL = 1 tHZ(1)
176
Data-out Low-Z time
tLZ
1
1
1
Data-out hold time (load)
tOH
3
3
3
Data-out hold time (no load)
tOHn
1.8
1.8
1.8
ACTIVE-to-PRECHARGE command
tRAS
42 120,000 37 120,000 44 120,000
ACTIVE-to-ACTIVE command period
tRC
60
60
66
ACTIVE-to-READ or WRITE delay
tRCD
18
15
20
Refresh period (8192 rows)
tREF
64
64
64
Refresh period – automotive (8192 rows) tREFAT
16
16
16
AUTO REFRESH period
tRFC
60
66
66
PRECHARGE command period
tRP
18
15
20
ACTIVE bank a to ACTIVE bank b com-
tRRD
12
14
15
mand
Transition time
tT
0.3
1.2
0.3
1.2
0.3
1.2
WRITE recovery time
tWR 1 CLK + – 1 CLK + – 1 CLK + –
6ns
7ns
7.5ns
12
14
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
Notes
7
7
7
8
8
8
9
9
9
10
11
12
13
14
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. S 12/12 EN
27
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© 1999 Micron Technology, Inc. All rights reserved.
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