256Mb: x4, x8, x16 SDRAM
Electrical Specifications – AC Operating Conditions
Electrical Specifications – AC Operating Conditions
Table 12: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–5 apply to all parameters and conditions
-6A
-7E
-75
Parameter
Symbol Min Max Min Max Min Max
Access time from CLK
(positive edge)
CL = 3 tAC(3)
–
5.4
–
5.4
–
5.4
CL = 2 tAC(2)
–
7.56
–
5.4
–
6
CL = 1 tAC(1)
–
176
–
–
–
–
Address hold time
tAH
0.8
–
0.8
–
0.8
–
Address setup time
tAS
1.5
–
1.5
–
1.5
–
CLK high-level width
tCH
2.5
–
2.5
–
2.5
–
CLK low-level width
tCL
2.5
–
2.5
–
2.5
–
Clock cycle time
CL = 3 tCK(3)
6
–
7
–
7.5
–
CL = 2 tCK(2) 106
–
7.5
–
10
–
CL = 1 tCK(1) 206
–
–
–
–
–
CKE hold time
tCKH
0.8
–
0.8
–
0.8
–
CKE setup time
tCKS
1.5
–
1.5
–
1.5
–
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
–
0.8
–
0.8
–
CS#, RAS#, CAS#, WE#, DQM setup time tCMS
1.5
–
1.5
–
1.5
–
Data-in hold time
tDH
0.8
–
0.8
–
0.8
–
Data-in setup time
tDS
1.5
–
1.5
–
1.5
–
Data-out High-Z time
CL = 3 tHZ(3)
–
5.4
–
5.4
–
5.4
CL = 2 tHZ(2)
–
7.56
–
5.4
–
6
CL = 1 tHZ(1)
–
176
–
–
–
–
Data-out Low-Z time
tLZ
1
–
1
–
1
–
Data-out hold time (load)
tOH
3
–
3
–
3
–
Data-out hold time (no load)
tOHn
1.8
–
1.8
–
1.8
–
ACTIVE-to-PRECHARGE command
tRAS
42 120,000 37 120,000 44 120,000
ACTIVE-to-ACTIVE command period
tRC
60
–
60
–
66
–
ACTIVE-to-READ or WRITE delay
tRCD
18
–
15
–
20
–
Refresh period (8192 rows)
tREF
–
64
–
64
–
64
Refresh period – automotive (8192 rows) tREFAT
–
16
–
16
–
16
AUTO REFRESH period
tRFC
60
–
66
–
66
–
PRECHARGE command period
tRP
18
–
15
–
20
–
ACTIVE bank a to ACTIVE bank b com-
tRRD
12
–
14
–
15
–
mand
Transition time
tT
0.3
1.2
0.3
1.2
0.3
1.2
WRITE recovery time
tWR 1 CLK + – 1 CLK + – 1 CLK + –
6ns
7ns
7.5ns
12
–
14
–
15
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
Notes
7
7
7
8
8
8
9
9
9
10
11
12
13
14
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. S 12/12 EN
27
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© 1999 Micron Technology, Inc. All rights reserved.