MT48LC8M32B2B5-6 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48LC8M32B2B5-6' PDF : 55 Pages View PDF
PRELIMINARY
256Mb: x32
SDRAM
T0
CLK
T1
tCL
tCH
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
NOP
DQM 0-3
A0-A9, A11
tAS tAH
ROW
tAS tAH
A10
ROW
BA0, BA1
tAS tAH
BANK
DQ
tRCD
WRITE – FULL-PAGE BURST
T2
T3
T4
T5
tCK
( ( Tn + 1
))
((
))
WRITE
NOP
NOP
tCMS tCMH
((
))
((
))
((
))
NOP ( (
NOP
))
((
))
((
))
Tn + 2
Tn + 3
BURST TERM
NOP
COLUMN m1
BANK
tDS tDH
DIN m
tDS tDH
DIN m + 1
((
))
((
))
((
))
((
))
((
))
((
))
tDS tDH
DIN m + 2
tDS tDH
((
))
DIN m + 3 ( (
))
tDS tDH
DIN m - 1
256 locations within same row
Full page completed
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.2, 3
NOTE: 1. A9 and A11 = “Don’t Care.”
2. tWR must be satisfied prior to PRECHARGE command.
3. Page left open; no tRP.
09005aef80cd8e48
256MbSDRAMx32.p65 – Rev. B; Pub. 03/04
52
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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