ADVANCE
128Mb: x16, x32
MOBILE SDRAM
SINGLE WRITE – WITH AUTO PRECHARGE1
T0
CLK
tCKS tCKH
CKE
T1
tCK
tCMS tCMH
COMMAND
ACTIVE
NOP3
T2
tCL
tCH
NOP3
DQMU, DQML
A0-A9, A11
A10
BA0, BA1
tAS tAH
ROW
tAS tAH
ROW
tAS tAH
BANK
DQ
tRCD
tRAS
tRC
T3
T4
T5
NOP3
WRITE
NOP
tCMS tCMH
COLUMN m 2
ENABLE AUTO PRECHARGE
BANK
tDS tDH
DIN m
tWR
T6
T7
T8
T9
NOP
NOP
ACTIVE
NOP
ROW
ROW
BANK
tRP
DON’T CARE
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
tCKH
tCKS
tCMH
-8
MIN MAX
1
2.5
3
3
8
10
20
1
2.5
1
-10
MIN MAX
1
2.5
3
3
10
12
25
1
2.5
1
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL*
tCMS
tDH
tDS
tRAS
tRC
tRCD
tRP
tWR
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 1.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
3. WRITE command not allowed else tRAS would be violated.
-8
-10
MIN MAX MIN MAX UNITS
2.5
2.5
ns
1
1
ns
2.5
2.5
ns
48 120,000 50 120,000 ns
80
100
ns
20
20
ns
20
20
ns
1 CLK +
1 CLK +
–
7ns
5ns
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.