MTM15N20 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'MTM15N20' PDF : 2 Pages View PDF
1
2
ELECTRICAL CHARACTERISTICS — continued ITC - 25'C unlm otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS'
Gate Threshold Voltage
(vDs = VGS. ID = 1 ^AI
Tj = 100'C
vGS(th)
Static Drain-Source OnResistance (VGS= '° v<lc- 'D = 75 Adc)
Drain-Source On-Voltags (VQS = '0 V)
(ID - 15 Adc)
(ID = 7.5 Adc, Tj = 100°CI
'DS(on)
vDS(on)
Forward Transconductance (Vrjs = 15 V, ID = 7 5 A)
9FS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|VDS = 25 V, VGs = 0.
f = 1 MHz)
SWITCHING CHARACTERISTICS* ITj = 100 C)
Ciss
GOSS
Crss
Turn-On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
(VDD " 25 V, Irj = 0.5 Rated ID
Rgen = 5" ohms)
See Figures 13 and 14
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(vDs - «•« Rated VDSS-
ID - Rated ID. VQS = 10 V)
See Figure 12
SOURCE DRAIN DIODE CHARACTERISTICS'
>d(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
INTERNAL PACKAGE INDUCTANCE (TO-204)
(Is - Rated IQ
VGS = 01
VSD
'on
trr
Internal Drain Inductance
Ld
(Maasured from the contact screw on the header closer
to the source pin and the center of the die)
Internal Source Inductance
LS
IMtHurad from the source pin, 0.25' from the package
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO 218)
Internal Drain Inductance
Ld
(Measured from screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of die)
Internal Source Inductance
L.
(Measured from the source lead 0.25" from package to center of die)
•Pulut I.it: Put» Width f 300 /it. Duty Cycle ? 2%
| M4n
Max
Unit
Vdc
2
4.5
1.5
4
-
0.16
Ohm
Vdc
-
3
24
4
-
mhos
-
2000
pF
-
700
-
200
—
60
ns
-
300
-
220
-
250
60 (Typ)
75
nC
35 (Typ)
—
25 (Typ)
-
1.5(Typl
2.1
Vdc
Limited by stray inductance
450 (Typ)
-
ns
5 (Typ)
"
nH
12.6 (Typl
nH
4 (Typ)
—
5 (Typ)
„
10 (Typ)
—
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