MTP50N06V View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'MTP50N06V' PDF : 2 Pages View PDF
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MTP50N06V
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted)
Characteristic
Symbol
Mm
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 uAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
Vdc
69
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = °Vdc. TJ = 150°C)
Gate-Body Leakage Current (VGS = ± 20 Vdc, VDS = °)
!DSS
'GSS
uAdc
_
I 10
100
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID =25° nAdc)
Temperature Coefficient (Negative)
VQS(th)
2.0
2.7
4.0
Vdc
3.0
mV/°C
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 21 Adc)
Drain-Source On-Voltage (VQS = 10 Vdc)
(ID = 42 Adc)
(ID = 21 Adc, Tj = 150°C)
Forward Transconductance (VDS = 6 25 Vdc, ID = 20 Adc)
RDS(on)
vDS(on)
9FS
—
0.025
0.028
Ohm
Vdc
1.4
1.7
=
1.6
16
23
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDS ~ 25 Vdc, VGS - ° Vdc,
f = 1.0 MHz)
(VDQ = 25 Vdc, ID = 42 Adc,
VGS = 10 Vdc,
RG = 9.1 Q)
(VDS = 48 Vdc, ID = 42 Adc,
VGS = 10 Vdc)
Cjss
COss
crss
td(on)
»r
td(off)
tf
QT
QI
Q2
Q-3
—
1644
2320
PF
—
465
660
—
112
230
—
12
20
ns
—
122
250
—
64
110
—
54
90
—
47
70
nC
—
9
—
—
21
—
—
16
—
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage (1)
(IS = 42 Adc, VGS = 0Vdc)
(IS = 42 Adc, VGS = 0Vdc, TJ = 150°C)
Reverse Recovery Time
(See Figure 14)
(IS = 42 Adc, VGS = ° Vdc,
dls/dt = 100A/|is)
Reverse Recovery Stored Charge
VSD
trr
ta
<b
QRR
Vdc
—
1.06
2.5
0.99
—
84
—
ns
—
73
—
—
11
—
—
0.28
—
nc
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of die)
LD
nH
—
3.5
—
4.5
Internal Source Inductance
LS
(Measured from the source lead 0.25" from package to source bond pad)
—
7.5
—
nH
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