MX29LV040
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
(TA = 0oC to 70oC, VCC = 3.3V±5% for MX29LV040-55R)
Table 11. Erase/Program Operations
29LV040-55R
SYMBOL PARAMETER
MIN. MAX.
tWC
Write Cycle Time (Note 1)
55
tAS
Address Setup Time
0
tAH
Address Hold Time
45
tDS
Data Setup Time
35
tDH
Data Hold Time
0
tOES Output Enable Setup Time
0
tGHWL Read Recovery Time Before Write 0
(OE High to WE Low)
tCS
CE Setup Time
0
tCH
CE Hold Time
0
tWP
Write Pulse Width
35
tWPH Write Pulse Width High
30
tWHWH1 Programming Operation (Note 2)
9(TYP.)
tWHWH2 Sector Erase Operation (Note 2)
0.7(TYP.)
tVCS VCC Setup Time (Note 1)
50
tRB
Recovery Time from RY/BY
0
tBUSY Program/Erase Vaild to RY/BY Delay 90
29LV040-70
MIN.
MAX.
70
0
45
35
0
0
0
0
0
35
30
9(TYP.)
0.7(TYP.)
50
0
90
29LV040-90
MIN. MAX.
90
0
45
45
0
0
0
0
0
35
30
9(TYP.)
0.7(TYP.)
50
0
90
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
us
ns
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM0722
REV. 0.7, JUL. 12, 2001
22