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MXP1018-C View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
MFG CO.
MXP1018-C
Microsemi
Microsemi Corporation Microsemi
'MXP1018-C' PDF : 1 Pages View PDF
1
2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Photo SCR Chip
Features
Light Activated Photo SCR
Planar PNPN
High Voltage
• Cathode and Gate pads are Aluminum Wire bondable
• Anode is backside of die
• Backside metallization - Gold
• Die Attach methods: eutectic or epoxy
MXP1018-C
Electrical Characteristics @ 25oC
SYMBOL
CHARACTERISTIC
VDM
Off-State Voltage
VRM
Reverse Voltage
IDM
Off-State Leakage Current
IRM
Reverse Leakage
IGT
Gate Trigger Current
IH
Holding Current
tON
Turn-On Time
CONDITIONS
MIN
TYP
MAX
UNITS
660
Volts
550
Volts
0.2
µ Amps
0.5
µ Amps
1.3
µ Amps
40
µ Amps
5
µseconds
Data Sheet # MSC1330.PDF
Updated:October 1998
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